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Radio Frequency Power Amplifiers using Gallium Arsenide (GaAs) Hetero-junction Bipolar Transistors (HBT)

Project Title:
Radio Frequency Power Amplifiers using Gallium Arsenide (GaAs) Hetero-junction Bipolar Transistors (HBT)
Project Reference:
ART/090CI
Project Type:
Project Period:
20100517 - 20121116
Funds Approved (HK$’000):
7422
Project Coordinator:
Mr David Kwong
Deputy Project Coordinator:
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Deliverable:
Research Group:
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Sponsor:
Sana Semiconductors Limited [Sponsor]
Description:
Co-Applicant:
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Keywords:
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